PENENTUAN MICROSTRUCTURE LAPISAN TIPIS CdS MENGGUNAKAN X-RAY DIFFRACTOMETER

Abstract

ABSTRACT

Five of sample CdS has been producted by using Thermal Evaporation method with temperature of substrat 200 °C – 250 °C. The samples characterized by using XRD. Based on XRD result and comparing it with data of PDF, thin film of CdS have crystal structure of hexagonal (wurzite), crystal orientation (002) with lattice parameter of a = 4,132 Å, c = 6,77 Å. Finally, by using Scherrer formula obtained mean of grain size 175 Å and growth zone of thin film of CdS reside at zone I and T (transition), this meaning movement of grain limited.

Keywords: thermal evaporation, crystal structure, grain size, growth zone